BSZ050N03LSGATMA1

Teknik Özellikler

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Terminal Sayısı

5

Yayın Yılı

2005

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 50W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

35nC @ 10V

Terminal Formu

NO LEAD

Rise Time

4ns

Number Of Elements

1

Additional Feature

AVALANCHE RATED, HIGH VOLTAGE

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

18 Weeks

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

30V

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

2800pF @ 15V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

16A Ta 40A Tc

Halogen Free

Halogen Free

Power Dissipation

50W

Pin Sayısı

8

Drain Currentmax Abs Id

40A

Kılıf / Paket

8-PowerTDFN

Pin Sayısı

8

Jesd30 Code

R-PDSO-N5

Vgs Max

±20V

Avalanche Energy Rating Eas

70 mJ