BSZ042N04NSGATMA1

Teknik Özellikler

Parça Durumu

Obsolete

Case Connection

DRAIN

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 69W Tc

Rise Time

3.4ns

Additional Feature

AVALANCHE RATED, HIGH VOLTAGE

Turn On Delay Time

14 ns

Fabrika Tedarik Süresi

18 Weeks

Max Dual Supply Voltage

40V

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

3700pF @ 20V

ECCN Kodu

EAR99

Pin Sayısı

8

Jesd30 Code

R-PDSO-N5

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

8-PowerVDFN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

150 mJ

Vgs Max

±20V

Kurşunsuz Kodu

no

Pulsed Drain Currentmax Idm

160A

Rds On Max Id Vgs

4.2m Ω @ 20A, 10V

Seri

OptiMOS™

JESD-609 Kodu

e3

Continuous Drain Current Id

40A

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Drainsource On Resistancemax

0.0042Ohm

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2003

Terminal Sayısı

5

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

46nC @ 10V

Terminal Formu

NO LEAD

Number Of Elements

1

Transistor Element Material

SILICON