BSZ025N04LSATMA1

Teknik Özellikler

Terminal Sayısı

3

Yayın Yılı

2012

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 69W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0032Ohm

Fet Type

N-Channel

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

18 Weeks

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

40V

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

52nC @ 10V

Number Of Elements

1

ECCN Kodu

EAR99

Current Continuous Drain Id25

22A Ta 40A Tc

Halogen Free

Halogen Free

Input Capacitance Ciss Max Vds

3680pF @ 20V

Transistor Application

SWITCHING

Rds On Max Id Vgs

2.5m Ω @ 20A, 10V

Seri

OptiMOS™

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

160A

Kurşunsuz Kodu

yes

Continuous Drain Current Id

40A

Drain Currentmax Abs Id

22A

Kılıf / Paket

8-PowerTDFN

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant