BSZ017NE2LS5IATMA1

Teknik Özellikler

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0023Ohm

Case Connection

DRAIN

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.1W Ta 50W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Gate Charge Qg Max Vgs

30nC @ 10V

Terminal Formu

NO LEAD

Max Dual Supply Voltage

25V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

2000pF @ 12V

Halogen Free

Halogen Free

Current Continuous Drain Id25

27A Ta 40A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Avalanche Energy Rating Eas

40 mJ

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N3

REACH Uyumluluk Kodu

not_compliant

Pin Sayısı

8

Drain Currentmax Abs Id

27A

Continuous Drain Current Id

40A

Rds On Max Id Vgs

1.7m Ω @ 20A, 10V

Seri

OptiMOS™