BSS84PH6433XTMA1

Teknik Özellikler

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

-170mA

Current Continuous Drain Id25

170mA Ta

Number Of Elements

1

Seri

SIPMOS®

Operating Mode

ENHANCEMENT MODE

Yükseklik

1.1mm

Input Capacitance Ciss Max Vds

19pF @ 25V

Terminal Pozisyonu

DUAL

Genişlik

1.3mm

Fabrika Tedarik Süresi

10 Weeks

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Contact Plating

Tin

Yayın Yılı

2002

Vgsth Max Id

2V @ 20μA

Uzunluk

2.9mm

Element Configuration

Single

Drainsource On Resistancemax

8Ohm

Ambalaj

Cut Tape (CT)

Transistor Element Material

SILICON

Fet Type

P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Channels

1

Turn On Delay Time

6.7 ns

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

8 Ω @ 170mA, 10V

Gate Charge Qg Max Vgs

1.5nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Pin Sayısı

3

Turn Off Delay Time

8.6 ns

Drain To Source Breakdown Voltage

-60V

Parça Durumu

Active

Fall Time Typ

20.5 ns

Radyasyon Dayanımı

No