BSS209PWH6327XTSA1

Teknik Özellikler

Input Capacitance Ciss Max Vds

115pF @ 15V

Terminal Pozisyonu

DUAL

Genişlik

1.25mm

Yükseklik

800μm

Seri

OptiMOS™

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Current Continuous Drain Id25

630mA Tc

Continuous Drain Current Id

580mA

Akım Değeri

-580mA

Voltage Rated Dc

-20V

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Fet Type

P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Ambalaj

Cut Tape (CT)

Drainsource On Resistancemax

0.55Ohm

Vgsth Max Id

1.2V @ 3.5μA

Uzunluk

2mm

Element Configuration

Single

Yayın Yılı

2011

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

10 Weeks

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Parça Durumu

Active

Fall Time Typ

4.6 ns

Pin Sayısı

3

Turn Off Delay Time

6 ns

Montaj

Surface Mount

Gate Charge Qg Max Vgs

1.3nC @ 4.5V

Gate To Source Voltage Vgs

12V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Turn On Delay Time

26 ns

Rds On Max Id Vgs

550m Ω @ 630mA, 4.5V

Drain To Source Voltage Vdss

20V

Vgs Max

±12V