BSS139H6906XTSA1

Teknik Özellikler

Fet Feature

Depletion Mode

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Ds Breakdown Voltagemin

250V

Vgsth Max Id

1V @ 56μA

Rise Time

5.4ns

Feedback Capmax Crss

3.3 pF

Terminal Sayısı

3

Contact Plating

Tin

Yayın Yılı

2006

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

360mW Ta

Drainsource On Resistancemax

30Ohm

Vgs Max

±20V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

TO-261-4, TO-261AA

Transistor Element Material

SILICON

Drain Currentmax Abs Id

0.1A

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

0V 10V

Gate Charge Qg Max Vgs

3.5nC @ 5V

Terminal Formu

GULL WING

Rds On Max Id Vgs

14 Ω @ 100mA, 10V

Drain To Source Voltage Vdss

250V

Current Continuous Drain Id25

100mA Ta

Continuous Drain Current Id

100mA

Montaj

Surface Mount

Seri

SIPMOS®

Parça Durumu

Not For New Designs

Number Of Elements

1

Input Capacitance Ciss Max Vds

76pF @ 25V

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount