BSS138WH6327XTSA1

Teknik Özellikler

Genişlik

1.25mm

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

43pF @ 25V

Yükseklik

1mm

Seri

SIPMOS®

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Continuous Drain Current Id

280mA

Current Continuous Drain Id25

280mA Ta

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Transistor Element Material

SILICON

Ambalaj

Cut Tape (CT)

Akım

2A

Vgsth Max Id

1.4V @ 26μA

Uzunluk

2mm

Element Configuration

Single

Contact Plating

Tin

Yayın Yılı

2002

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

10 Weeks

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fall Time Typ

8.2 ns

Parça Durumu

Active

Turn Off Delay Time

6.7 ns

Drain To Source Breakdown Voltage

60V

Pin Sayısı

3

Montaj

Surface Mount

Weight

124.596154mg

Gate Charge Qg Max Vgs

1.5nC @ 10V

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

3.5 Ω @ 200mA, 10V

Number Of Channels

1

Turn On Delay Time

2.2 ns

Terminal Formu

GULL WING

Max Dual Supply Voltage

60V

Kılıf / Paket

SC-70, SOT-323