Adet bazlı fiyat
- 1+ adet$1.69
- 10+ adet$1.60
- 100+ adet$1.51
- 500+ adet$1.42
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gate To Source Voltage Vgs
- 20V
- Current Continuous Drain Id25
- 5.2A Ta
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 4
- Rise Time
- 16ns
- Turn Off Delay Time
- 28 ns
- Voltage Rated Dc
- 55V
- JESD-609 Kodu
- e3
- RoHS Durumu
- Non-RoHS Compliant
- Kılıf / Paket
- TO-261-4, TO-261AA
- Number Of Elements
- 1
- Contact Plating
- Tin
- Genişlik
- 3.5mm
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2008
- Fet Type
- N-Channel
- Montaj
- Surface Mount
- Drain To Source Breakdown Voltage
- 55V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1390pF @ 25V
- Rds On Max Id Vgs
- 33m Ω @ 2.6A, 10V
- Continuous Drain Current Id
- 5.2A
- Halogen Free
- Not Halogen Free
- Vgs Max
- ±20V
- Montaj Tipi
- Surface Mount
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Uzunluk
- 6.5mm
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 1.8W Ta
- Max Dual Supply Voltage
- 55V
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- Kurşunsuz Kodu
- yes
- Kurşunsuz
- Contains Lead
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Yükseklik
- 1.6mm
- Fall Time Typ
- 16 ns
- ECCN Kodu
- EAR99
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