
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Rds On Max Id Vgs
- 300m Ω @ 1.9A, 10V
- Input Capacitance Ciss Max Vds
- 460pF @ 25V
- Ds Breakdown Voltagemin
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 6 ns
- Terminal Formu
- GULL WING
- Drain To Source Voltage Vdss
- 60V
- Continuous Drain Current Id
- 1.9A
- Yayın Yılı
- 2005
- Transistor Element Material
- SILICON
- Power Dissipation
- 1.8W
- Montaj
- Surface Mount
- Vgsth Max Id
- 2V @ 460μA
- Fet Type
- P-Channel
- Parça Durumu
- Obsolete
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Seri
- SIPMOS®
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Sayısı
- 4
- Feedback Capmax Crss
- 55 pF
- Kılıf / Paket
- TO-261-4, TO-261AA
- RoHS Durumu
- RoHS Compliant
- ECCN Kodu
- EAR99
- Fall Time Typ
- 87 ns
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- JESD-609 Kodu
- e3
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Kurşunsuz Kodu
- yes
- Rise Time
- 25ns
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 4
- Drainsource On Resistancemax
- 0.3Ohm
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
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