BSP129H6327XTSA1

Teknik Özellikler

Fet Feature

Depletion Mode

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

350mA Ta

Terminal

SMD/SMT

Nominal Vgs

-1.4 V

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

22 ns

Pin Sayısı

4

Drainsource On Resistancemax

20Ohm

Ambalaj

Cut Tape (CT)

Rise Time

4.1ns

Fet Type

N-Channel

Montaj

Surface Mount

Max Junction Temperature Tj

150°C

Genişlik

3.5mm

Yayın Yılı

2012

Transistor Element Material

SILICON

Continuous Drain Current Id

120mA

Halogen Free

Halogen Free

Input Capacitance Ciss Max Vds

108pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

240V

Threshold Voltage

-2.1V

Rds On Max Id Vgs

6 Ω @ 350mA, 10V

Number Of Channels

1

RoHS Durumu

ROHS3 Compliant

Akım

35A

Kılıf / Paket

TO-261-4, TO-261AA

Contact Plating

Tin

Number Of Elements

1

Fabrika Tedarik Süresi

10 Weeks

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Case Connection

DRAIN

Pin Sayısı

4

Radyasyon Dayanımı

No

Dual Supply Voltage

240V

Drive Voltage Max Rds On Min Rds On

0V 10V

Montaj Tipi

Surface Mount