BSP125H6327XTSA1

Teknik Özellikler

Gate Charge Qg Max Vgs

6.6nC @ 10V

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Seri

SIPMOS®

Reach Svhc

No SVHC

Terminal Sayısı

4

ECCN Kodu

EAR99

Yükseklik

1.5mm

Fall Time Typ

110 ns

Terminal Formu

GULL WING

Turn On Delay Time

7.7 ns

Power Dissipation

1.7W

Element Configuration

Single

Parça Durumu

Active

Vgsth Max Id

2.3V @ 94μA

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Uzunluk

6.5mm

Power Dissipation Max

1.8W Ta

Max Dual Supply Voltage

600V

Vgs Max

±20V

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Radyasyon Dayanımı

No

Pin Sayısı

4

Case Connection

DRAIN

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

10 Weeks

Number Of Elements

1

Kılıf / Paket

TO-261-4, TO-261AA

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

45 Ω @ 120mA, 10V

Threshold Voltage

1.9V

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

150pF @ 25V

Halogen Free

Halogen Free

Continuous Drain Current Id

120mA

Transistor Element Material

SILICON