BSO110N03MSGXUMA1

Teknik Özellikler

Rds On Max Id Vgs

11m Ω @ 12.1A, 10V

Parça Durumu

Active

Transistor Application

SWITCHING

Turn On Delay Time

7.8 ns

Vgsth Max Id

2V @ 250μA

Seri

OptiMOS™

Transistor Element Material

SILICON

Fall Time Typ

4.4 ns

Nem Hassasiyeti (MSL)

3 (168 Hours)

Vgs Max

±20V

Terminal Sayısı

8

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Avalanche Energy Rating Eas

20 mJ

Contact Plating

Tin

Kurşunsuz

Lead Free

Pin Sayısı

8

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Additional Feature

AVALANCHE RATED

Current Continuous Drain Id25

10A Ta

Power Dissipation Max

1.56W Ta

Rise Time

4.4ns

Terminal Formu

GULL WING

Turn Off Delay Time

9.5 ns

Max Dual Supply Voltage

30V

Yayın Yılı

2010

Reach Svhc

No SVHC

Power Dissipation

1.56W

Radyasyon Dayanımı

No

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1500pF @ 15V

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

20nC @ 10V