BSF035NE2LQXUMA1

Teknik Özellikler

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

3

Case Connection

DRAIN

Parça Durumu

Active

Current Continuous Drain Id25

22A Ta 69A Tc

Power Dissipation Max

2.2W Ta 28W Tc

Drain Currentmax Abs Id

22A

JESD-609 Kodu

e4

Gate Charge Qg Max Vgs

25nC @ 10V

Seri

OptiMOS™

Drainsource On Resistancemax

0.0046Ohm

Pulsed Drain Currentmax Idm

276A

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Kılıf / Paket

3-WDSON

HTS Kodu

8541.29.00.95

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

1862pF @ 12V

Avalanche Energy Rating Eas

50 mJ

Vgsth Max Id

2V @ 250μA

Drain To Source Breakdown Voltage

25V

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

Terminal Kaplaması

Silver/Nickel (Ag/Ni)

Terminal Pozisyonu

BOTTOM

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

69A

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rds On Max Id Vgs

3.5m Ω @ 30A, 10V

Transistor Element Material

SILICON

Fet Type

N-Channel