BSC883N03LSGATMA1

Teknik Özellikler

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 57W Tc

Current Continuous Drain Id25

17A Ta 98A Tc

Turn On Delay Time

6.4 ns

Gate Charge Qg Max Vgs

34nC @ 10V

Drain Currentmax Abs Id

17A

Terminal Sayısı

5

Fabrika Tedarik Süresi

39 Weeks

Vgs Max

±20V

Parça Durumu

Active

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Reach Svhc

No SVHC

Turn Off Delay Time

26 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

4 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

Number Of Elements

1

Input Capacitance Ciss Max Vds

2800pF @ 15V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

392A

Seri

OptiMOS™

Threshold Voltage

2.2V

Yayın Yılı

2011

Ds Breakdown Voltagemin

34V

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

50 mJ

Vgsth Max Id

2.2V @ 250μA

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

34V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel