BSC500N20NS3GATMA1

Teknik Özellikler

Pulsed Drain Currentmax Idm

97A

Drainsource On Resistancemax

0.05Ohm

Seri

OptiMOS™

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1580pF @ 100V

Number Of Elements

1

Montaj

Surface Mount

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Vgs Max

±20V

Parça Durumu

Active

Case Connection

DRAIN

Power Dissipation Max

96W Tc

Contact Plating

Tin

Current Continuous Drain Id25

24A Tc

Gate Charge Qg Max Vgs

15nC @ 10V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

24A

Rds On Max Id Vgs

50m Ω @ 22A, 10V

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

5ns

Terminal Formu

FLAT

Ambalaj

Cut Tape (CT)

Vgsth Max Id

4V @ 60μA

Avalanche Energy Rating Eas

120 mJ

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

200V

Configuration

SINGLE WITH BUILT-IN DIODE