BSC252N10NSFGATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

4V @ 43μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Pin Sayısı

8

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Power Dissipation

78W

Continuous Drain Current Id

7.2A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

25.2m Ω @ 20A, 10V

Jesd30 Code

R-PDSO-F5

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

21ns

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

13 Weeks

Terminal Sayısı

5

Vgs Max

±20V

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

17nC @ 10V

Power Dissipation Max

78W Tc

Contact Plating

Tin

Qualification Status

Not Qualified

Current Continuous Drain Id25

7.2A Ta 40A Tc

Yayın Yılı

2010

Kurşunsuz Kodu

no

Operating Mode

ENHANCEMENT MODE

Seri

OptiMOS™

Drainsource On Resistancemax

0.0252Ohm

Pin Sayısı

8