BSC22DN20NS3GATMA1

Teknik Özellikler

Continuous Drain Current Id

7A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Rise Time

4ns

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Pin Sayısı

8

Yayın Yılı

2006

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.225Ohm

Pin Sayısı

8

Number Of Elements

1

Input Capacitance Ciss Max Vds

430pF @ 100V

Reach Svhc

No SVHC

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

5

Vgs Max

±20V

Power Dissipation Max

34W Tc

Contact Plating

Tin

Qualification Status

Not Qualified

Current Continuous Drain Id25

7A Tc

Power Dissipation

34W

Rds On Max Id Vgs

225m Ω @ 3.5A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

200V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

4V @ 13μA

Avalanche Energy Rating Eas

30 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

no