BSC190N12NS3GATMA1

Teknik Özellikler

Max Dual Supply Voltage

120V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Vgsth Max Id

4V @ 42μA

Avalanche Energy Rating Eas

60 mJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Power Dissipation

69W

Rds On Max Id Vgs

19m Ω @ 39A, 10V

Terminal Formu

FLAT

Transistor Element Material

SILICON

Fet Type

N-Channel

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

34nC @ 10V

Turn On Delay Time

17 ns

Kurşunsuz Kodu

no

Seri

OptiMOS™

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj

Surface Mount

Fall Time Typ

4 ns

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

22 ns

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

8.6A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Rise Time

16ns

Vgs Max

±20V