BSC160N10NS3GATMA1

Teknik Özellikler

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Rise Time

15ns

Continuous Drain Current Id

8.8A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

8.8A Ta 42A Tc

Power Dissipation Max

60W Tc

Qualification Status

Not Qualified

Vgs Max

±20V

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Number Of Elements

1

Input Capacitance Ciss Max Vds

1700pF @ 50V

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

50 mJ

Vgsth Max Id

3.5V @ 33μA

Max Dual Supply Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Rds On Max Id Vgs

16m Ω @ 33A, 10V

Power Dissipation

60W

Turn On Delay Time

13 ns

Gate Charge Qg Max Vgs

25nC @ 10V

JESD-609 Kodu

e3