BSC097N06NSATMA1

Teknik Özellikler

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rise Time

2ns

Halogen Free

Halogen Free

Montaj Tipi

Surface Mount

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

9.7m Ω @ 40A, 10V

Continuous Drain Current Id

46A

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

3.3V @ 14μA

Avalanche Energy Rating Eas

13 mJ

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

60V

Reach Svhc

No SVHC

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Input Capacitance Ciss Max Vds

1075pF @ 30V

Number Of Elements

1

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0097Ohm

Seri

OptiMOS™

Threshold Voltage

2.8V

Yayın Yılı

2005

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta 36W Tc

Contact Plating

Tin

Current Continuous Drain Id25

46A Tc