BSC0909NSATMA1

Teknik Özellikler

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

34V

Rise Time

4.4ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Jesd30 Code

R-PDSO-F5

Continuous Drain Current Id

44A

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

12A Ta 44A Tc

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 27W Tc

Vgs Max

±20V

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN

Input Capacitance Ciss Max Vds

1110pF @ 15V

Number Of Elements

1

Pin Sayısı

8

Drainsource On Resistancemax

0.0091Ohm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2V @ 250μA

Avalanche Energy Rating Eas

10 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

30V

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rds On Max Id Vgs

9.2m Ω @ 20A, 10V

Turn On Delay Time

9.6 ns

Drain Currentmax Abs Id

12A