BSC0906NSATMA1

Teknik Özellikler

Vgsth Max Id

2V @ 250μA

Avalanche Energy Rating Eas

14 mJ

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

30V

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

4.5m Ω @ 30A, 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

13nC @ 10V

Pulsed Drain Currentmax Idm

252A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-F5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

63A

REACH Uyumluluk Kodu

not_compliant

Rise Time

3.8ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Terminal Sayısı

5

Vgs Max

±20V

Qualification Status

Not Qualified

Power Dissipation Max

2.5W Ta 30W Tc