BSC080P03LSGAUMA1

Teknik Özellikler

Vgsth Max Id

2.2V @ 250μA

Max Dual Supply Voltage

-30V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

25V

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

8m Ω @ 30A, 10V

Power Dissipation

2.5W

Transistor Element Material

SILICON

Fet Type

P-Channel

Terminal Formu

FLAT

Fabrika Tedarik Süresi

16 Weeks

Case Connection

DRAIN

Parça Durumu

Not For New Designs

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

122.4nC @ 10V

Seri

OptiMOS™

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V

Pin Sayısı

8

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Continuous Drain Current Id

16A

Jesd30 Code

R-PDSO-F5

REACH Uyumluluk Kodu

not_compliant

Rise Time

87ns

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Vgs Max

±25V

Terminal Sayısı

5

Current Continuous Drain Id25

16A Ta 30A Tc

Power Dissipation Max

2.5W Ta 89W Tc