BSC080N03MSGATMA1

Teknik Özellikler

Gate Charge Qg Max Vgs

27nC @ 10V

JESD-609 Kodu

e3

Turn On Delay Time

10 ns

Current Continuous Drain Id25

13A Ta 53A Tc

Power Dissipation Max

2.5W Ta 35W Tc

Additional Feature

AVALANCHE RATED

Contact Plating

Tin

Case Connection

DRAIN

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2100pF @ 15V

Number Of Elements

1

Montaj

Surface Mount

Pin Sayısı

8

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

5.6 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn Off Delay Time

10 ns

Kılıf / Paket

8-PowerTDFN

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Ds Breakdown Voltagemin

30V

Yayın Yılı

2002

Seri

OptiMOS™

Transistor Application

SWITCHING

Pin Sayısı

8

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Drain To Source Voltage Vdss

30V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 250μA

Ambalaj

Tape & Reel (TR)

Rise Time

5.4ns

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Transistor Element Material

SILICON