BSC079N10NSGATMA1

Teknik Özellikler

Turn On Delay Time

24 ns

Gate Charge Qg Max Vgs

87nC @ 10V

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Not For New Designs

Case Connection

DRAIN

Turn Off Delay Time

38 ns

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

11 ns

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

no

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 110μA

Avalanche Energy Rating Eas

377 mJ

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

100V

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Formu

FLAT

Rds On Max Id Vgs

7.9m Ω @ 50A, 10V

Power Dissipation

156W

Qualification Status

Not Qualified

Power Dissipation Max

156W Tc

Current Continuous Drain Id25

13.4A Ta 100A Tc

Terminal Sayısı

5

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Input Capacitance Ciss Max Vds

5900pF @ 50V

Number Of Elements

1

Drainsource On Resistancemax

0.0079Ohm