BSC059N04LSGATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

40V

Avalanche Energy Rating Eas

25 mJ

Vgsth Max Id

2V @ 23μA

Terminal Pozisyonu

DUAL

Kurşunsuz

Contains Lead

Power Dissipation

50W

Rds On Max Id Vgs

5.9m Ω @ 50A, 10V

Radyasyon Dayanımı

No

Terminal Formu

FLAT

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Active

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

40nC @ 10V

Drain Currentmax Abs Id

16A

Additional Feature

LOGIC LEVEL COMPATIBLE

Turn On Delay Time

5.6 ns

Kurşunsuz Kodu

no

Pulsed Drain Currentmax Idm

292A

Seri

OptiMOS™

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Turn Off Delay Time

23 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

3.8 ns

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Pin Sayısı

8

Jesd30 Code

R-PDSO-F5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

73A

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

3.4ns

Terminal Sayısı

5

Vgs Max

±20V