BSC052N03LSATMA1

Teknik Özellikler

Terminal Formu

FLAT

Fet Type

N-Channel

Transistor Element Material

SILICON

Power Dissipation

2.5W

Rds On Max Id Vgs

5.2m Ω @ 30A, 10V

Radyasyon Dayanımı

No

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage

30V

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 250μA

Montaj

Surface Mount

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

2.4 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn Off Delay Time

13 ns

Kurşunsuz Kodu

no

Seri

OptiMOS™

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

12nC @ 10V

Turn On Delay Time

2.4 ns

Case Connection

DRAIN

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

3.6ns

Jesd30 Code

R-PDSO-F5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

17A

Transistor Application

SWITCHING

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

770pF @ 15V

Number Of Elements

1

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Kılıf / Paket

8-PowerTDFN