BSC046N02KSGAUMA1

Teknik Özellikler

Fabrika Tedarik Süresi

26 Weeks

Case Connection

DRAIN

Parça Durumu

Active

Turn On Delay Time

15 ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain Currentmax Abs Id

19A

JESD-609 Kodu

e3

Gate Charge Qg Max Vgs

27.6nC @ 4.5V

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

200A

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Fall Time Typ

6 ns

Turn Off Delay Time

34 ns

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Vgsth Max Id

1.2V @ 110μA

Avalanche Energy Rating Eas

151 mJ

Drain To Source Breakdown Voltage

20V

Gate To Source Voltage Vgs

12V

Element Configuration

Single

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nominal Vgs

950 mV

Rds On Max Id Vgs

4.6m Ω @ 50A, 4.5V

Power Dissipation

48W

Transistor Element Material

SILICON

Fet Type

N-Channel

Uzunluk

6.35mm

Terminal Formu

FLAT

Vgs Max

±12V

Terminal Sayısı

5

Current Continuous Drain Id25

19A Ta 80A Tc

Power Dissipation Max

2.8W Ta 48W Tc

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.0046Ohm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2011

Threshold Voltage

950mV