BSC040N10NS5ATMA1

Teknik Özellikler

Turn Off Delay Time

32 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Fall Time Typ

10 ns

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Turn On Delay Time

13 ns

Gate Charge Qg Max Vgs

72nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Weight

506.605978mg

Transistor Element Material

SILICON

Fet Type

N-Channel

Terminal Formu

FLAT

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

4m Ω @ 50A, 10V

Power Dissipation

139W

Terminal Pozisyonu

DUAL

Element Configuration

Single

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Breakdown Voltage

100V

Vgsth Max Id

3.8V @ 95μA

Avalanche Energy Rating Eas

200 mJ

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

100V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Input Capacitance Ciss Max Vds

5300pF @ 50V

Drainsource On Resistancemax

0.004Ohm

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta 139W Tc

Current Continuous Drain Id25

100A Tc

Terminal Sayısı

5