BSC032N04LSATMA1

Teknik Özellikler

Vgsth Max Id

2V @ 250μA

Avalanche Energy Rating Eas

30 mJ

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

40V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

98A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PDSO-F5

Rds On Max Id Vgs

3.2m Ω @ 50A, 10V

Power Dissipation

2.5W

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Halogen Free

Halogen Free

Rise Time

4ns

Terminal Formu

FLAT

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

5

Case Connection

DRAIN

Parça Durumu

Active

Current Continuous Drain Id25

21A Ta 98A Tc

Power Dissipation Max

2.5W Ta 52W Tc

Gate Charge Qg Max Vgs

25nC @ 10V

Drainsource On Resistancemax

0.0044Ohm

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

392A

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2012

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

8-PowerTDFN

RoHS Durumu

ROHS3 Compliant