BSC030N08NS5ATMA1

Teknik Özellikler

Turn Off Delay Time

43 ns

Fall Time Typ

13 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

400A

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Turn On Delay Time

20 ns

Gate Charge Qg Max Vgs

76nC @ 10V

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Case Connection

DRAIN

Weight

506.605978mg

Transistor Element Material

SILICON

Fet Type

N-Channel

Max Junction Temperature Tj

150°C

Terminal Formu

FLAT

Rds On Max Id Vgs

3m Ω @ 50A, 10V

Power Dissipation

2.5W

Terminal Pozisyonu

DUAL

Element Configuration

Single

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Breakdown Voltage

80V

Avalanche Energy Rating Eas

250 mJ

Vgsth Max Id

3.8V @ 95μA

Gate To Source Voltage Vgs

20V

Max Dual Supply Voltage

80V

Kılıf / Paket

8-PowerTDFN

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Input Capacitance Ciss Max Vds

5600pF @ 40V

Drainsource On Resistancemax

0.003Ohm

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta 139W Tc

Current Continuous Drain Id25

100A Tc

Terminal Sayısı

5