BSC030N03MSGATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

8

Gate To Source Voltage Vgs

16V

Gate Charge Qg Max Vgs

73nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

5700pF @ 15V

Power Dissipation

69W

Parça Durumu

Active

Transistor Element Material

SILICON

Vgsth Max Id

2V @ 250μA

Rise Time

10ns

Qualification Status

Not Qualified

Halogen Free

Halogen Free

Pulsed Drain Currentmax Idm

400A

Vgs Max

±20V

Pin Sayısı

8

Additional Feature

AVALANCHE RATED

Power Dissipation Max

2.5W Ta 69W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

JESD-609 Kodu

e3

Contact Plating

Tin

Avalanche Energy Rating Eas

75 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

30V

Kurşunsuz

Contains Lead

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

3m Ω @ 30A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

21A Ta 100A Tc