BSC028N06LS3GATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

5

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

77 ns

Gate Charge Qg Max Vgs

175nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

13000pF @ 30V

Power Dissipation

2.5W

Parça Durumu

Active

Number Of Channels

1

Transistor Element Material

SILICON

Vgsth Max Id

2.2V @ 93μA

Jesd30 Code

R-PDSO-F5

Rise Time

17ns

Halogen Free

Halogen Free

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8

Vgs Max

±20V

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 139W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-PowerTDFN

Max Junction Temperature Tj

150°C

Case Connection

DRAIN

JESD-609 Kodu

e3

Contact Plating

Tin

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Yükseklik

1.1mm

Radyasyon Dayanımı

No

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

60V

Kurşunsuz

Contains Lead

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

19 ns