BSC026NE2LS5ATMA1

Teknik Özellikler

Drain Currentmax Abs Id

24A

Pin Sayısı

8

Vgs Max

±16V

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 29W Tc

Current Continuous Drain Id25

24A Ta 82A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

2.6m Ω @ 30A, 10V

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

14 mJ

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

not_compliant

Montaj

Surface Mount

Drainsource On Resistancemax

0.004Ohm

Kılıf / Paket

8-PowerTDFN

Yayın Yılı

2013

Transistor Application

SWITCHING

Seri

OptiMOS™

Case Connection

DRAIN

Continuous Drain Current Id

82A

Montaj Tipi

Surface Mount

Terminal Sayısı

5

Gate Charge Qg Max Vgs

16nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

1100pF @ 12V

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F5

Vgsth Max Id

2V @ 250μA

Terminal Formu

FLAT

Kurşunsuz Kodu

yes

Max Dual Supply Voltage

25V

Number Of Elements

1