BSC026N08NS5ATMA1

Teknik Özellikler

Rise Time

14ns

Jesd30 Code

R-PDSO-F5

Vgsth Max Id

3.8V @ 115μA

Transistor Element Material

SILICON

Number Of Channels

1

Parça Durumu

Active

Power Dissipation

156W

Input Capacitance Ciss Max Vds

6800pF @ 40V

ECCN Kodu

EAR99

Turn Off Delay Time

47 ns

Gate Charge Qg Max Vgs

92nC @ 10V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Montaj Tipi

Surface Mount

Threshold Voltage

3V

Drive Voltage Max Rds On Min Rds On

6V 10V

Avalanche Energy Rating Eas

370 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Case Connection

DRAIN

Max Junction Temperature Tj

150°C

Kılıf / Paket

8-PowerTDFN

Power Dissipation Max

2.5W Ta 156W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Pin Sayısı

8

Pulsed Drain Currentmax Idm

400A

Drain Currentmax Abs Id

23A

Halogen Free

Halogen Free

Weight

506.605978mg

Turn On Delay Time

18 ns

Drain To Source Breakdown Voltage

80V

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Kurşunsuz

Contains Lead

Max Dual Supply Voltage

80V

Kurşunsuz Kodu

yes

Terminal Formu

FLAT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED