BSC026N02KSGAUMA1

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

9 ns

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Dual Supply Voltage

20V

Number Of Elements

1

Kurşunsuz

Contains Lead

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Turn On Delay Time

21 ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

25A Ta 100A Tc

Rds On Max Id Vgs

2.6m Ω @ 50A, 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Seri

OptiMOS™

Continuous Drain Current Id

25A

Drainsource On Resistancemax

0.0045Ohm

Yayın Yılı

2011

Transistor Application

SWITCHING

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

52.7nC @ 4.5V

Turn Off Delay Time

52 ns

Input Capacitance Ciss Max Vds

7800pF @ 10V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

12V

Terminal Sayısı

5

Power Dissipation

78W

Parça Durumu

Active

Jesd30 Code

R-PDSO-F5

Vgsth Max Id

1.2V @ 200μA

Rise Time

115ns

Transistor Element Material

SILICON