BSC025N03MSGATMA1

Teknik Özellikler

Kurşunsuz Kodu

no

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Number Of Elements

1

Max Dual Supply Voltage

30V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

22 ns

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Yayın Yılı

2010

Drainsource On Resistancemax

0.003Ohm

Continuous Drain Current Id

23A

Seri

OptiMOS™

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

2.5m Ω @ 30A, 10V

Current Continuous Drain Id25

23A Ta . 100A Tc

Ambalaj

Tape & Reel (TR)

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Parça Durumu

Active

Power Dissipation

83W

Transistor Element Material

SILICON

Rise Time

11ns

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F5

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

5

Gate To Source Voltage Vgs

16V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

7600pF @ 15V

Turn Off Delay Time

29 ns

Gate Charge Qg Max Vgs

98nC @ 10V

Kılıf / Paket

8-PowerTDFN