BSC025N03LSGATMA1

Teknik Özellikler

Fall Time Typ

6 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Radyasyon Dayanımı

No

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

30V

Kurşunsuz

Contains Lead

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

10 ns

Rds On Max Id Vgs

2.5m Ω @ 30A, 10V

Current Continuous Drain Id25

25A Ta 100A Tc

Ambalaj

Tape & Reel (TR)

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Drainsource On Resistancemax

0.0036Ohm

Transistor Application

SWITCHING

Yayın Yılı

2009

Continuous Drain Current Id

100A

Seri

OptiMOS™

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

8

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

74nC @ 10V

Turn Off Delay Time

36 ns

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

6100pF @ 15V

Power Dissipation

83W

Parça Durumu

Active

Transistor Element Material

SILICON

Vgsth Max Id

2.2V @ 250μA

Rise Time

6.2ns

Halogen Free

Halogen Free

Drain Currentmax Abs Id

25A

Pulsed Drain Currentmax Idm

400A