BSC019N04NSGATMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 125W Tc

Pulsed Drain Currentmax Idm

400A

Vgs Max

±20V

Pin Sayısı

8

Halogen Free

Halogen Free

Qualification Status

Not Qualified

Avalanche Energy Rating Eas

295 mJ

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Contact Plating

Tin

Case Connection

DRAIN

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

108nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

8800pF @ 20V

Montaj Tipi

Surface Mount

Terminal Sayısı

5

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgsth Max Id

4V @ 85μA

Jesd30 Code

R-PDSO-F5

Rise Time

5.6ns

Transistor Element Material

SILICON

Power Dissipation

125W

Parça Durumu

Active

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1.9m Ω @ 50A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

30A Ta 100A Tc

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

29A

Seri

OptiMOS™

Transistor Application

SWITCHING

Yayın Yılı

2009