BSC016N06NSATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

5200pF @ 30V

ECCN Kodu

EAR99

Turn Off Delay Time

35 ns

Gate Charge Qg Max Vgs

71nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

6V 10V

Transistor Element Material

SILICON

Number Of Channels

1

Rise Time

9ns

Jesd30 Code

R-PDSO-F3

Vgsth Max Id

2.8V @ 95μA

Parça Durumu

Active

Power Dissipation

2.5W

Pin Sayısı

8

Vgs Max

±20V

Pulsed Drain Currentmax Idm

400A

Power Dissipation Max

2.5W Ta 139W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Halogen Free

Halogen Free

Contact Plating

Tin

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Kılıf / Paket

8-PowerTDFN

JESD-609 Kodu

e3

Case Connection

DRAIN

Max Junction Temperature Tj

150°C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

9 ns

Yükseklik

1.1mm

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

60V

Turn On Delay Time

19 ns

Kurşunsuz Kodu

no

Terminal Formu

FLAT

Number Of Elements

1