BSC016N03MSGATMA1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

31 ns

Terminal Formu

FLAT

Kurşunsuz Kodu

no

Max Dual Supply Voltage

30V

Number Of Elements

1

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Current Continuous Drain Id25

28A Ta 100A Tc

Rds On Max Id Vgs

1.6m Ω @ 30A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Drainsource On Resistancemax

0.002Ohm

Yayın Yılı

2009

Transistor Application

SWITCHING

Seri

OptiMOS™

Continuous Drain Current Id

28A

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

16V

Terminal Sayısı

8

Turn Off Delay Time

42 ns

Gate Charge Qg Max Vgs

173nC @ 10V

Input Capacitance Ciss Max Vds

13000pF @ 15V

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Element Material

SILICON

Vgsth Max Id

2V @ 250μA

Rise Time

16ns

Power Dissipation

125W

Parça Durumu

Active

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8