BSC016N03LSGATMA1

Teknik Özellikler

Terminal Sayısı

8

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

10000pF @ 15V

Gate Charge Qg Max Vgs

131nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Element Material

SILICON

Rise Time

8.6ns

Vgsth Max Id

2.2V @ 250μA

Parça Durumu

Not For New Designs

Power Dissipation

125W

Pin Sayısı

8

Vgs Max

±20V

Drain Currentmax Abs Id

32A

Pulsed Drain Currentmax Idm

400A

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

Halogen Free

Halogen Free

Contact Plating

Tin

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

290 mJ

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Number Of Elements

1

Max Dual Supply Voltage

30V

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

1.6m Ω @ 30A, 10V

Current Continuous Drain Id25

32A Ta 100A Tc