BSC014N06NSATMA1

Teknik Özellikler

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Turn Off Delay Time

43 ns

Gate Charge Qg Max Vgs

89nC @ 10V

Input Capacitance Ciss Max Vds

6500pF @ 30V

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

6V 10V

Threshold Voltage

2.8V

Number Of Channels

1

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F3

Vgsth Max Id

2.8V @ 120μA

Rise Time

10ns

Power Dissipation

156W

Parça Durumu

Active

Pulsed Drain Currentmax Idm

400A

Drain Currentmax Abs Id

30A

Pin Sayısı

8

Vgs Max

±20V

Power Dissipation Max

2.5W Ta 156W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Halogen Free

Halogen Free

Contact Plating

Tin

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Kılıf / Paket

8-PowerTDFN

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Case Connection

DRAIN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

11 ns

Yükseklik

1.1mm

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

23 ns

Drain To Source Breakdown Voltage

60V

Terminal Formu

FLAT

Kurşunsuz Kodu

no