BSC014N04LSIATMA1

Teknik Özellikler

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

90 mJ

Max Junction Temperature Tj

150°C

Case Connection

DRAIN

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerTDFN

Additional Feature

LOGIC LEVEL COMPATIBLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 96W Tc

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8

Vgs Max

±20V

Halogen Free

Halogen Free

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F3

Number Of Channels

1

Transistor Element Material

SILICON

Power Dissipation

2.5W

Parça Durumu

Active

Turn Off Delay Time

55 ns

Gate Charge Qg Max Vgs

55nC @ 10V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4000pF @ 20V

Montaj Tipi

Surface Mount

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Threshold Voltage

2V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

100A

Seri

OptiMOS™

Drainsource On Resistancemax

0.002Ohm

Transistor Application

SWITCHING

Yayın Yılı

2010

Fet Type

N-Channel

Fabrika Tedarik Süresi

39 Weeks

Ambalaj

Cut Tape (CT)