BSC014N04LSATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4300pF @ 20V

Turn Off Delay Time

55 ns

Gate Charge Qg Max Vgs

61nC @ 10V

Parça Durumu

Active

Transistor Element Material

SILICON

Rise Time

56ns

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F3

Halogen Free

Halogen Free

Pin Sayısı

8

Vgs Max

±20V

Pulsed Drain Currentmax Idm

400A

Additional Feature

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

Power Dissipation Max

2.5W Ta 96W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

JESD-609 Kodu

e3

Contact Plating

Tin

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

not_compliant

Avalanche Energy Rating Eas

170 mJ

Pin Sayısı

8

Fall Time Typ

11 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

no

Terminal Formu

FLAT

Kurşunsuz

Contains Lead

Number Of Elements

1

Max Dual Supply Voltage

40V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

16 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED