BSC010N04LSTATMA1

Teknik Özellikler

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

330 mJ

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Seri

OptiMOS™

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

40V

Yüzey Montaj

YES

Transistor Application

SWITCHING

Kılıf / Paket

8-PowerTDFN

Drainsource On Resistancemax

0.0013Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

3W Ta 167W Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

39 Weeks

Vgs Max

±20V

Drain Currentmax Abs Id

38A

Pulsed Drain Currentmax Idm

400A

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1m Ω @ 50A, 10V

Current Continuous Drain Id25

39A Ta 100A Tc

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Parça Durumu

Active

Terminal Formu

FLAT

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

9520pF @ 20V

Gate Charge Qg Max Vgs

133nC @ 10V

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

40V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ