BSC009NE2LS5IATMA1

Teknik Özellikler

Max Junction Temperature Tj

150°C

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

REACH Uyumluluk Kodu

not_compliant

Terminal Pozisyonu

DUAL

Avalanche Energy Rating Eas

50 mJ

Halogen Free

Halogen Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta 74W Tc

Pulsed Drain Currentmax Idm

400A

Pin Sayısı

8

Vgs Max

±16V

Power Dissipation

2.5W

Parça Durumu

Active

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-PDSO-F5

Rise Time

33ns

Number Of Channels

1

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

49nC @ 10V

Turn Off Delay Time

27 ns

Input Capacitance Ciss Max Vds

3200pF @ 12V

Montaj Tipi

Surface Mount

Terminal Sayısı

5

Gate To Source Voltage Vgs

16V

Continuous Drain Current Id

40A

Seri

OptiMOS™

Transistor Application

SWITCHING

Yayın Yılı

2013

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

0.95m Ω @ 30A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

40A Ta 100A Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Max Dual Supply Voltage

25V