BSB165N15NZ3GXUMA1

Teknik Özellikler

Turn On Delay Time

10 ns

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Terminal Formu

NO LEAD

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drain To Source Voltage Vdss

150V

Çalışma Sıcaklığı

-40°C~150°C TJ

Fall Time Typ

7 ns

Terminal Kaplaması

Silver/Nickel (Ag/Ni)

Pin Sayısı

3

Reach Svhc

No SVHC

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Seri

OptiMOS™

Continuous Drain Current Id

9A

Yayın Yılı

2011

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

9A Ta 45A Tc

Rds On Max Id Vgs

16.5m Ω @ 30A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jesd30 Code

R-MBCC-N3

Vgsth Max Id

4V @ 110μA

Transistor Element Material

SILICON

Power Dissipation

2.8W

Parça Durumu

Active

Turn Off Delay Time

17 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Input Capacitance Ciss Max Vds

2800pF @ 75V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

8V 10V

Threshold Voltage

3V

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

440 mJ