BSB104N08NP3GXUSA1

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Avalanche Energy Rating Eas

110 mJ

Terminal Pozisyonu

BOTTOM

Transistor Application

SWITCHING

Yayın Yılı

2008

Kılıf / Paket

3-WDSON

Drainsource On Resistancemax

0.0104Ohm

Case Connection

DRAIN

Continuous Drain Current Id

50A

Seri

OptiMOS™

JESD-609 Kodu

e4

Ds Breakdown Voltagemin

80V

Fet Type

N-Channel

Pin Sayısı

3

Vgs Max

±20V

Fabrika Tedarik Süresi

26 Weeks

Pulsed Drain Currentmax Idm

200A

Nem Hassasiyeti (MSL)

3 (168 Hours)

Power Dissipation Max

2.8W Ta 42W Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

10.4m Ω @ 10A, 10V

Current Continuous Drain Id25

13A Ta 50A Tc

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rise Time

4ns

Vgsth Max Id

3.5V @ 40μA

Terminal Formu

NO LEAD

Number Of Elements

1

Parça Durumu

Active

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

80V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2100pF @ 40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

31nC @ 10V